Monolithic optocoupler isolated driver chip

نویسندگان

چکیده

在功率半导体市场中,绝缘æ 双极型晶体管(Insulated gate bipolar transistor,IGBTï¼‰å’Œç¢³åŒ–ç¡ é‡‘å±žæ°§åŒ–ç‰©åŠå¯¼ä½“åœºæ•ˆåº”ç®¡ï¼ˆSilicon carbide metal-oxide-semiconductor field-effect transistor,SiC MOSFETï¼‰å ·æœ‰å‡ºè‰²çš„è€åŽ‹æ€§ä¸Žé¢‘çŽ‡ç‰¹æ€§ï¼Œé€æ¸å–ä»£äº†ä¼ ç»Ÿçš„MOSFET。为了提高IGBT和SiC MOSFETé©±åŠ¨ç”µè·¯çš„å¯é æ€§ï¼Œè®¾è®¡äº†ä¸€æ¬¾å ‰è€¦éš”ç¦»å¼æ æžé©±åŠ¨èŠ¯ç‰‡ï¼Œé€šè¿‡ååŒè®¾è®¡å ‰æŽ¢æµ‹å™¨ä¸Žé©±åŠ¨ç”µè·¯ï¼Œä»Žè€Œå®žçŽ°å•ç‰‡é›†æˆã€‚ä½¿ç”¨Silvacoè½¯ä»¶å¯¹å ‰æŽ¢æµ‹å™¨è¿›è¡Œäº†ä»¿çœŸã€‚ä»¿çœŸç»“æžœæ˜¾ç¤ºï¼šå ‰æŽ¢æµ‹å™¨å¯¹800 nmæ³¢é•¿çº¢å¤–å ‰çš„å“åº”åº¦çº¦ä¸º0.277 A/W,-3 dB带宽约为90 MHzã€‚è¿›ä¸€æ­¥å¯¹å ‰è€¦çš„å ‰å­¦ç»“æž„è¿›è¡Œä¼˜åŒ–è®¾è®¡ï¼Œå®žçŽ°äº†æŽ§åˆ¶ç«¯ä¸ŽåŽç«¯é«˜åŽ‹é©±åŠ¨ç”µè·¯çš„æœ‰æ•ˆéš”ç¦»ï¼Œä»Žè€Œè§£å†³äº†ä¸²æ‰°é—®é¢˜ã€‚ä½¿ç”¨Maxchip 0.18 μm 40 V BCDå·¥è‰ºè¿›è¡Œæµç‰‡ï¼Œå¹¶å¯¹å°è£ èŠ¯ç‰‡è¿›è¡Œæµ‹è¯•ã€‚åœ¨å ‰æºè¾“å ¥ç”µæµä¸º10 mA、芯片供电电压为12~40 Vã€è¾“å ¥ä¿¡å·é¢‘çŽ‡ä¸º20 kHzçš„æµ‹è¯•æ¡ä»¶ä¸‹ï¼ŒèŠ¯ç‰‡çš„ä¼ æ’­å»¶æ—¶ä» ä¸º98 ns。

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ژورنال

عنوان ژورنال: Guangxue jingmi gongcheng

سال: 2023

ISSN: ['1004-924X']

DOI: https://doi.org/10.37188/ope.20233107.1022